ISSN 2380-4505
Vol. 2008, Issue Symposium, 2008July 09, 2026 EDT
Efficient Gate Drive Mechanism for Novel Silicon Carbide Power FETs
Efficient Gate Drive Mechanism for Novel Silicon Carbide Power FETs
Madhuravasal, Vijayaraghavan, Pratibha Kota, and Chriswell Hutchens. 2026. “Efficient Gate Drive Mechanism for Novel Silicon Carbide Power FETs.” IMAPSource Proceedings 2008 (Symposium): 1126–33. https://doi.org/10.4071/001c.164874.
