Spurious Turn-On inside a Power Module of Paralleled SiC MOSFETs

Zichen Miao; Khai D. T. Ngo

doi:10.4071/isom-2016-WP55

Loading [Contrib]/a11y/accessibility-menu.js

Miao, Zichen, and Khai D. T. Ngo. 2016. “Spurious Turn-On inside a Power Module of Paralleled SiC MOSFETs.” IMAPSource Proceedings 2016 (1): 379–84. https://doi.org/10.4071/isom-2016-WP55.

View more stats