ISSN 2380-4505
Vol. 2010, Issue HITEC, 2010January 01, 2010 EDT
A High-Temperature Folded-Cascode Operational Transconductance Amplifier in 0.8-μm BCD-on-SOI
A High-Temperature Folded-Cascode Operational Transconductance Amplifier in 0.8-μm BCD-on-SOI
C. Su, B. J. Blalock, S. K. Islam, L. Zuo, L. M. Tolbert,
Articles in Vol. 2010, Issue HITEC, 2010
Vol. 2010, Issue HITEC, 2010
- Piezoelectric Structural Sensor Technology for Extreme EnvironmentsMichael Ian LapsleyEdward F. AlbertaRaffi SahulWesley HackenbergerXiaoning JiangShujun ZhangThomas Shrout
- Rugged ICs against Corrosion, Shock plus Hotter TemperaturesJames J. Wang
- The Behaviour of Au-Au Wire Bonds in Extreme EnvironmentsD. ShepherdP.S. GrantC. JohnstonS. Riches
- Packaging Technology for High Temperature Capacitive Pressure SensorsLiang-Yu ChenGlenn M. BeheimRoger D. Meredith
- New High Temperature Electronic Components for Power Management and Motor Control ApplicationsPierre DelatteV. DessardA. SaibN. PequignotG. PicúnL. DemeûsL. MartinezT. KrebsJ.-C. Doucet
- Modeling and Simulation of the Thermal Drift Characteristics of the Piezoresistive Pressure SensorR. OtmaniN. BenmoussaK. Ghaffour
- High Temperature Lithium Alloy Cells With Improved Low Temperature PerformanceArden P. JohnsonCuiyang WangJohn S. Miller
- Assessing the Reliability of Die Attach Materials in Electronic Packages for High Temperature ApplicationsM.F. SousaS. RichesC. JohnstonP.S. Grant
- High-Temperature, Bulk-CMOS Integrated Circuits for a Distributed FADEC SystemSteve MajerusDaniel HoweSteven GarverickDavid HiscockWalter Merrill
- SiC Power Switch ModuleMichael J. PalmerR. Wayne JohnsonTracy AutryRizal AguirreVictor LeeJames D. Scofield
- High Temperature (230 °C) Isolated Power SupplyB. ReeseR. ShawJ. HornbergerR. SchupbachA. Lostetter
- Edge-Controlled Mechanical Failure of Si and SiC Semiconductor ChipsA. A. WereszczakO. M. JadaanT. P. Kirkland
- 285°C Resistor Drift and Failure AnalysisMark HahnRon SmithMilton Watts
- Demonstrated Performance Characteristics For Improved High Temperature Ceramic Capacitors Intended For Use In Extreme, Harsh EnvironmentsMustafa A. SyammachMichael J. RoachFauzi A. SyammachMustapha Habibi
- Performance and Reliability Characteristics of 1200 V, 100 A, 200°C Half-Bridge SiC MOSFET-JBS Diode Power ModulesJames D. ScofieldJ. Neil MerrettJames RichmondAnant AgarwalScott Leslie
- High Temperature Inverter for Airborne ApplicationFabien DuboisDominique BergogneDamien RisalettoRémi RobutelHervé MorelRégis MeuretSonia Dhokkar
- High Temperature Capacitors Based on [0001] and [1120] Sapphire DielectricsLiang-Yu Chen
- New Rechargeable Battery for Application in a Wide Temperature RangeJosip CajaT. Don DunstanMario Caja
- High Temperature Performance of Normally-off SiC JFET's Compared to Competing ApproachesJ.B. CasadyD.C. SheridanA. RitenourV. BondarenkoR. Kelley
- High Temperature (250 °C) Silicon Carbide Power Modules With Integrated Gate Drive BoardsB. ReeseB. McPhersonR. ShawJ. HornbergerR. SchupbachA. LostetterB. RowdenA. MantoothS. AngJ. BaldaK. OkumuraT. Otsuka
- High temperature solders containing Aluminum and ZincH.R. KotadiaO. MokhtariM. BottrillM. P. ClodeM. A. GreenS. H. Mannan
- Capacitor Characterization Study for a High Power, High Frequency Converter ApplicationWilliam C. LanterHiroyuki KosaiTyler BixelB. Allen TolsonJeffery StrickerJames ScofieldNavjot BrarBiswajit Ray
- 1200 V 6 A High Temperature SiC BJTsAnders LindgrenMartin Domeij
- High-Temperature, High-Dielectric-Constant Capacitors for Power Inverters in Hybrid Electric VehiclesU. BalachandranM. NarayananB. Ma
- Parylene HT®: A High Temperature Vapor Phase Polymer for Electronics ApplicationsRakesh Kumar
- HIGH TEMPERATURE ULTRA HIGH VOLTAGE SIC THYRISTORSR. SinghS. CreamerE. LieserS. JeliazkovS. Sundaresan
- Comparison of High Temperature Operation of Silicon Carbide MOSFETs and Bipolar Junction TransistorsJim RichmondSei-Hyung RyuQingchun (Jon) ZhangBrett HullMrinal DasAlbert BurkAnant AgarwalJohn Palmour
- Nanocomposite Film Dielectrics for High Temperature Power Conditioning CapacitorsKirk SlenesLew Bragg
- Thermomechanical Stresses in Copper Films at Elevated TemperatureMartin LedererJavad ZarbakhshRui HuangThomas DetzelBrigitte Weiss
- Swelling Phenomena in Sintered Silver Die Attach Structures at High Temperatures: Reliability Problems and Solutions for an Operation above 350°CN. HeuckS. MüllerG. PalmA. BakinA. Waag
- Robust Class-I BME Ceramic Capacitors for High Temperature ApplicationsAbhijit GuravXilin XuJim MageeJeff FranklinTravis Ashburn
- Compact modeling of the high temperature effect on the single event transient current generated by heavy ions in SOI 6T-SRAME. BoufoussJ. AlvaradoD. Flandre
- A Universal BCD-on-SOI Based High Temperature Short Circuit Protection for SiC Power SwitchesLiang ZuoS. K. IslamM. A. HuqueC. SuB. J. BlalockL. M. Tolbert
- Characterization of Thick Film Technology for 300°C PackagingRui ZhangR. Wayne JohnsonVinayak TilakTan ZhangDavid Shaddock
- Effect of High Temperature Ageing on Active and Passive Power DevicesCyril ButtayRemi RobutelChristian MartinChristophe RaynaudSimeon DampieniDominique BergogneThibaut Chailloux
- Development of a SiC SSPC Module with Advanced High Temperature PackagingDouglas C HopkinsYuan-Bo GuoHerbert E DwyerJames D. Scofield
- Development of a 300°C capable SiC based operational amplifierVinayak TilakCheng-Po ChenPeter LoseeEmad AndarawisZachary Stum
- Application of High Temperature Electronics Packaging Technology to Signal Conditioning and Processing CircuitsS T RichesK CannonC JohnstonM SousaP GrantJ GulliverM LangleyR PittsonS SerbanD BaghurstM Firmstone
- A High-Temperature Folded-Cascode Operational Transconductance Amplifier in 0.8-μm BCD-on-SOIC. SuB. J. BlalockS. K. IslamL. ZuoL. M. Tolbert
- SiGe Amplifier and Buffer Circuits for High Temperature ApplicationsDylan B. ThomasNelson E. LourencoJohn D. CresslerSteven Finn
- Practical Oil Field Requirements for New High-Temperature BatteriesRandy Normann
- High Temperature CMOS Reliability and DriftShane Rose
- The Development and Qualification of a DC-DC Converter for 225°C (437°F) Operating TemperatureBob Hunt
- Design of High Temperature EMI Input Filter for a 2 kW HVDC-fed InverterRemi RobutelChristian MartinHerve MorelCyril ButtayDominique BergogneNicolas Gazel
- High Temperature SiC Power Module Electrical Evaluation ProcedurePuqi NingFred WangKhai D. T. Ngo
- Performance and Reliability of MEMS Gyroscopes and Packaging at High TemperaturesPatrick McCluskeyChandradip PatelDavid Lemus
- A Comparison of Multilayer Ceramic Capacitor Technologies for High Temperature ApplicationsCraig NiesScott HarrisStanley Cygan
- Assessment of Au-Ge Die Attachment for an Extended Junction Temperature Range in Power ApplicationsSatoshi TanimotoKohei MatsuiYoshinori MurakamiHiroshi YamaguchiHajime Okumura
- Reliability Assessment of Passives for 300C using HALTDavid ShaddockVinayak TilakTan ZhangRui ZhangR. Wayne Johnson
- Modeling and Design of High Temperature Silicon Carbide DMOSFET Based Medium Power DC-DC ConverterSiddharth PotbhareAkin AkturkNeil GoldsmanJames M. McGarrityAnant Agarwal
- Metallurgy for SiC Die Attach for Operation at 500°CPing ZhengPhillip HensonR. Wayne JohnsonLiangyu Chen
- Performance of commercial SOI driver in harsh conditions (up to 200°C)K. El FalahiB. AllardD. TournierD. Bergogne
- “Migration of Sintered Nanosilver Die-attach Material on Alumina Substrate at High Temperatures”Yunhui MeiDimeji IbitayoXu ChenSusan LuoGuo-Quan Lu
Su, C., B. J. Blalock, S. K. Islam, L. Zuo, and L. M. Tolbert. 2010. “A High-Temperature Folded-Cascode Operational Transconductance Amplifier in 0.8-Μm BCD-on-SOI.” IMAPSource Proceedings 2010 (HITEC): 83–88. https://doi.org/10.4071/HITEC-CSu-TA26.