ISSN 2380-4505
Vol. 2011, Issue HITEN, 2011January 01, 2011 EDT
285°C Resistor Drift and Failure Analysis
285°C Resistor Drift and Failure Analysis
Milton Watts, Ron Smith,
Articles in Vol. 2011, Issue HITEN, 2011
Vol. 2011, Issue HITEN, 2011
- ESEM as a Tool for Studying High Temperature ElectronicsStefan SvenssonFredric EricsonKlas HjortLena Klintberg
- 1200 V, >50A SILICON CARBIDE SUPER JUNCTION TRANSISTORRanbir SinghSiddarth SundaresanStoyan JeliazkovDeepak VeereddyEric Lieser
- Comparative Reliability Prediction Using Physics of Failure ModelsMilton WattsK. Rob Harker
- Thin Film Multichip Packaging for High Temperature Digital ElectronicsKun FangRui ZhangTami Isaacs-SmithR. Wayne JohnsonEmad AndarawisAlexey Vert
- Implementation of Silicon-on-Insulator (SOI) Control Electronics to Accelerometers for High Temperature ApplicationsS T RichesI WhiteG RickardG Chadwick
- A High Temperature and UV Stable Vapor Phase Polymer for Electronics ApplicationsRakesh Kumar
- Latchup Immunity in High Temperature Bulk CMOS DevicesR. LowtherW. MorrisD. GiffordD. DuffR. Fuller
- A Robust SOI Gain-Boosted Operational Amplifier Targeting High Temperature Precision Applications up to 300°CAlexander SchmidtAbdel Moneim MarzoukHolger KappertRainer Kokozinski
- Reliability Assessment of Passives for 300°C and 350°CDavid ShaddockAlexey VertTan ZhangRui ZhangR. Wayne Johnson
- Enhanced High Temperature Power ControllerJoseph A. HenflingStan AtcittyFrank Maldonado
- An Analysis of OTP ROM Programmable Devices in 1.0um SOI CMOSPaul W. MoodyMarshall Soares
- 1200V 20A SiC BJTs operating at 250°CAnders LindgrenMartin DomeijTomas Hjort
- Characterization of LTCC-Thick Film Technology for 300°C PackagingTan ZhangDavid ShaddockAlexey VertRui ZhangR. Wayne Johnson
- Optimizing the performance of the Au-Si system for high temperature die attach applicationsM.F. SousaS. RichesC. JohnstonP.S. Grant
- High Temperature Performance of Oxide Film CapacitorsKeith D. JamisonBill Balliette
- Development of a Silicon Nitride High Temperature Power ModuleMichael J. PalmerR. Wayne JohnsonMohammad MotalabJeffrey SuhlingJames D. Scofield
- Ceramic Capacitors and Stacks for High Temperature ApplicationsAbhijit GuravXilin XuJim MageeJohn BultitudeTravis Ashburn
- High Temperature Silicon-on-Insulator Gate Driver for SiC-FET Power ModulesJ. Valle MayorgaC. GutshallK. PhanI. EscorciaH. A. MantoothB. ReeseM. SchupbachA. Lostetter
- A Fully Functional Extreme Environment SiC Wireless Temperature Sensing SystemJie YangJohn R FraleyBryon WesternRoberto M. Schupbach
- Au-Sn SLID bonding for high temperature applicationsTorleif André TollefsenAndreas LarssonKnut Aasmundtveit
- High Temperature System Design for Electric and Hybrid Electric VehiclesOvidiu VermesanLars-Cyril BlystadReiner JohnMarco OttellaEgil Mollestad
- Package Reliability of the SiC Power Modules in Harsh EnvironmentsFengqun LangHiroshi YamaguchiHiroshi Sato
- 285°C Resistor Drift and Failure AnalysisMilton WattsRon Smith
- Nanocomposite Epoxy Resin for SiC ModuleKenji OkamotoYuji TakematsuMiyako HitomiYoshinari IkedaYoshikazu Takahashi
- Electrical Characterization of Lateral 4H-SiC MOSFETs in the Temperature Range of 25 to 600 °C for Harsh Environment ApplicationsW. DavesA. KraussV. HäubleinA. J. BauerL. Frey
- STROMBOLI®: a new platform for Isolated DC-DC Converters with reliable operation from −55°C up to 225°CPierre DelatteAimad SaibEtienne VanzieleghemJean-Christophe Doucet
- High Temperature Silicon Carbide Power Modules for High Performance SystemsJ. HornbergerB. McPhersonJ. BourneR. ShawE. CilioW. CilioB. ReeseE. HeinrichsT. McNuttM. SchupbachA.B. Lostetter
- Improvement of Dielectric Performance of a Prototype AlN High Temperature Chip-level PackageLiang-Yu Chen
- Die Attach of Power Devices Using Silver Sintering – Bonding Process Optimisation and CharacterizationCyril ButtayAmandine MassonJianfeng LiMark JohnsonMihai LazarChristophe RaynaudHervé Morel
- High-Temperature, High-Power Performance of Ceramic Filter CapacitorsK. BridgerA. CookeD. KohlhaferR. StriteW. SchulzeS. ArrasmithJ. WeignerF. Duva
- High Temperature Endurance of Packaged SOI Devices for Signal Conditioning and Processing ApplicationsS T RichesC JohnstonM SousaP Grant
- High Temperature Reliability Investigations of EEPROM Memory Cells Realised in Silicon-on-Insulator (SOI) TechnologyK. GrellaH. VogtU. Paschen
- 250°C Operating Temperature Dielectric Film CapacitorsMark DonhoweJeff LawlerSean SouffieE. Lee Stein
- Comparison of Au-In Transient Liquid Phase Bonding Designs for SiC Power Semiconductor Device PackagingBrian GrummelHabib A. MustainZ. John ShenAllen R. Hefner
- A performance comparison of normally-off and normally-on SiC JFETs toward use in high-temperature power modulesR. SchraderK. SpeerJ. CasadyV. BondarenkoD. Sheridan
- Reliability Testing on a Multilayer Chip Inductor Fabricated From a Ferrite With a 350 °C Curie PointJames GalipeauGeorge Slama
- Ultra low power CMOS circuits working in subthreshold regime for high temperature and radiation environmentsE. BoufoussL. A. FrancisP. GérardM. AssaadD. Flandre
- HADES®: a High-Temperature Isolated Gate Driver Solution for SiC-based Multi-kW ConvertersJean-Christophe DoucetAimad SaibChristian MouradFrançois PietteEtienne VanzieleghemPierre Delatte
- High Temperature Silicon Carbide CMOS Integrated CircuitsR.F. ThompsonD.T. ClarkA.E. MurphyE.P RamsayD.A SmithR.A.R. YoungJ.D. CormackJ. McGonigalJ. FletcherC. ZhuS. FinneyL.C. MartinA.B. Horsfall
Watts, Milton, and Ron Smith. 2011. “285°C Resistor Drift and Failure Analysis.” IMAPSource Proceedings 2011 (HITEN): 7–13. https://doi.org/10.4071/HITEN-Paper2-MWatts.