ISSN 2380-4505
Vol. 2011, Issue HITEN, 2011January 01, 2011 EDT
High Temperature Silicon-on-Insulator Gate Driver for SiC-FET Power Modules
High Temperature Silicon-on-Insulator Gate Driver for SiC-FET Power Modules
J. Valle Mayorga, C. Gutshall, K. Phan, I. Escorcia, H. A. Mantooth, B. Reese, M. Schupbach, A. Lostetter,
Articles in Vol. 2011, Issue HITEN, 2011
Vol. 2011, Issue HITEN, 2011
- ESEM as a Tool for Studying High Temperature ElectronicsStefan SvenssonFredric EricsonKlas HjortLena Klintberg
- 1200 V, >50A SILICON CARBIDE SUPER JUNCTION TRANSISTORRanbir SinghSiddarth SundaresanStoyan JeliazkovDeepak VeereddyEric Lieser
- Comparative Reliability Prediction Using Physics of Failure ModelsMilton WattsK. Rob Harker
- Thin Film Multichip Packaging for High Temperature Digital ElectronicsKun FangRui ZhangTami Isaacs-SmithR. Wayne JohnsonEmad AndarawisAlexey Vert
- Implementation of Silicon-on-Insulator (SOI) Control Electronics to Accelerometers for High Temperature ApplicationsS T RichesI WhiteG RickardG Chadwick
- A High Temperature and UV Stable Vapor Phase Polymer for Electronics ApplicationsRakesh Kumar
- Latchup Immunity in High Temperature Bulk CMOS DevicesR. LowtherW. MorrisD. GiffordD. DuffR. Fuller
- A Robust SOI Gain-Boosted Operational Amplifier Targeting High Temperature Precision Applications up to 300°CAlexander SchmidtAbdel Moneim MarzoukHolger KappertRainer Kokozinski
- Reliability Assessment of Passives for 300°C and 350°CDavid ShaddockAlexey VertTan ZhangRui ZhangR. Wayne Johnson
- Enhanced High Temperature Power ControllerJoseph A. HenflingStan AtcittyFrank Maldonado
- An Analysis of OTP ROM Programmable Devices in 1.0um SOI CMOSPaul W. MoodyMarshall Soares
- 1200V 20A SiC BJTs operating at 250°CAnders LindgrenMartin DomeijTomas Hjort
- Characterization of LTCC-Thick Film Technology for 300°C PackagingTan ZhangDavid ShaddockAlexey VertRui ZhangR. Wayne Johnson
- Optimizing the performance of the Au-Si system for high temperature die attach applicationsM.F. SousaS. RichesC. JohnstonP.S. Grant
- High Temperature Performance of Oxide Film CapacitorsKeith D. JamisonBill Balliette
- Development of a Silicon Nitride High Temperature Power ModuleMichael J. PalmerR. Wayne JohnsonMohammad MotalabJeffrey SuhlingJames D. Scofield
- Ceramic Capacitors and Stacks for High Temperature ApplicationsAbhijit GuravXilin XuJim MageeJohn BultitudeTravis Ashburn
- High Temperature Silicon-on-Insulator Gate Driver for SiC-FET Power ModulesJ. Valle MayorgaC. GutshallK. PhanI. EscorciaH. A. MantoothB. ReeseM. SchupbachA. Lostetter
- A Fully Functional Extreme Environment SiC Wireless Temperature Sensing SystemJie YangJohn R FraleyBryon WesternRoberto M. Schupbach
- Au-Sn SLID bonding for high temperature applicationsTorleif André TollefsenAndreas LarssonKnut Aasmundtveit
- High Temperature System Design for Electric and Hybrid Electric VehiclesOvidiu VermesanLars-Cyril BlystadReiner JohnMarco OttellaEgil Mollestad
- Package Reliability of the SiC Power Modules in Harsh EnvironmentsFengqun LangHiroshi YamaguchiHiroshi Sato
- 285°C Resistor Drift and Failure AnalysisMilton WattsRon Smith
- Nanocomposite Epoxy Resin for SiC ModuleKenji OkamotoYuji TakematsuMiyako HitomiYoshinari IkedaYoshikazu Takahashi
- Electrical Characterization of Lateral 4H-SiC MOSFETs in the Temperature Range of 25 to 600 °C for Harsh Environment ApplicationsW. DavesA. KraussV. HäubleinA. J. BauerL. Frey
- STROMBOLI®: a new platform for Isolated DC-DC Converters with reliable operation from −55°C up to 225°CPierre DelatteAimad SaibEtienne VanzieleghemJean-Christophe Doucet
- High Temperature Silicon Carbide Power Modules for High Performance SystemsJ. HornbergerB. McPhersonJ. BourneR. ShawE. CilioW. CilioB. ReeseE. HeinrichsT. McNuttM. SchupbachA.B. Lostetter
- Improvement of Dielectric Performance of a Prototype AlN High Temperature Chip-level PackageLiang-Yu Chen
- Die Attach of Power Devices Using Silver Sintering – Bonding Process Optimisation and CharacterizationCyril ButtayAmandine MassonJianfeng LiMark JohnsonMihai LazarChristophe RaynaudHervé Morel
- High-Temperature, High-Power Performance of Ceramic Filter CapacitorsK. BridgerA. CookeD. KohlhaferR. StriteW. SchulzeS. ArrasmithJ. WeignerF. Duva
- High Temperature Endurance of Packaged SOI Devices for Signal Conditioning and Processing ApplicationsS T RichesC JohnstonM SousaP Grant
- High Temperature Reliability Investigations of EEPROM Memory Cells Realised in Silicon-on-Insulator (SOI) TechnologyK. GrellaH. VogtU. Paschen
- 250°C Operating Temperature Dielectric Film CapacitorsMark DonhoweJeff LawlerSean SouffieE. Lee Stein
- Comparison of Au-In Transient Liquid Phase Bonding Designs for SiC Power Semiconductor Device PackagingBrian GrummelHabib A. MustainZ. John ShenAllen R. Hefner
- A performance comparison of normally-off and normally-on SiC JFETs toward use in high-temperature power modulesR. SchraderK. SpeerJ. CasadyV. BondarenkoD. Sheridan
- Reliability Testing on a Multilayer Chip Inductor Fabricated From a Ferrite With a 350 °C Curie PointJames GalipeauGeorge Slama
- Ultra low power CMOS circuits working in subthreshold regime for high temperature and radiation environmentsE. BoufoussL. A. FrancisP. GérardM. AssaadD. Flandre
- HADES®: a High-Temperature Isolated Gate Driver Solution for SiC-based Multi-kW ConvertersJean-Christophe DoucetAimad SaibChristian MouradFrançois PietteEtienne VanzieleghemPierre Delatte
- High Temperature Silicon Carbide CMOS Integrated CircuitsR.F. ThompsonD.T. ClarkA.E. MurphyE.P RamsayD.A SmithR.A.R. YoungJ.D. CormackJ. McGonigalJ. FletcherC. ZhuS. FinneyL.C. MartinA.B. Horsfall
Mayorga, J. Valle, C. Gutshall, K. Phan, I. Escorcia, H. A. Mantooth, B. Reese, M. Schupbach, and A. Lostetter. 2011. “High Temperature Silicon-on-Insulator Gate Driver for SiC-FET Power Modules.” IMAPSource Proceedings 2011 (HITEN): 152–58. https://doi.org/10.4071/HITEN-Paper4-JMayorga.