ISSN 2380-4505
Vol. 2021, Issue HiTEC, CICMT, Power, 2021April 01, 2021 EDT
Novel Materials and Structures for Wide and Ultra-Wide Bandgap Semiconductor Switches
Novel Materials and Structures for Wide and Ultra-Wide Bandgap Semiconductor Switches
A. Christou,
Articles in Vol. 2021, Issue HiTEC, CICMT, Power, 2021
Vol. 2021, Issue HiTEC, CICMT, Power, 2021
- Novel Materials and Structures for Wide and Ultra-Wide Bandgap Semiconductor SwitchesA. Christou
- 4–20mA optical sensor at 300C using SiC and SOI integrated circuitsCheng-Po ChenEmad Andarawis
- 300°C Optical CommunicationsEmad AndarawisCheng-Po (Paul) ChenBaokai Cheng
- A High Temperature SOI-CMOS Chipset Focusing Sensor Electronics for Operating Temperatures up to 300 °CHolger KappertSebastian BraunNorbert KordasAndre KosfeldAlexander UtzConstanze WeberOlaf RämerMalte SpanierMartin IhleSteffen ZiescheRainer Kokozinski
- Effect of High Temperature Storage on AC Characteristics of Polymer Tantalum CapacitorsAlexander Teverovsky
- Bridging the Gap: A Qualitative Study on the Viability and Performance of Metalized Polyetherimide (PEI) Film Capacitors at High TemperatureDaniel TylerSvetlana LukichRaul DePersiaChase GuilbeauMark Carter
- GE SiC Semiconductor Device Operation at Extreme TemperaturesDavid Esler
- Enhancement Mode GaN-FETs in Extreme Temperature Conditions, Part I: Static Parasitic ParametersMartijn S. DuraijYudi XiaoGabriel ZsurzsanZhe Zang
- Enhancement Mode GaN-FETs in Extreme Temperature Conditions, Part II: Dynamic Parasitic ParametersMartijn S. DuraijYudi XiaoGabriel ZsurzsanZhe Zang
- Package Design and Analysis for Vertical Gallium Nitride Field Effect TransistorsJohn HarrisDavid HuitinkDan Ewing
- Upscaling of 500 °C Durable SiC JFET-R Integrated CircuitsPhilip G. NeudeckDavid J. SpryMichael J. KrasowskiLiangyu ChenLawrence C. GreerCarl W. ChangDorothy LukcoGlenn M. BeheimNorman F. Prokop
- A 96% Alumina based Packaging System for 500°C Test of SiC Integrated CircuitsLiangyu ChenPhilip G. NeudeckDavid J. SpryGlenn M. BeheimGary W. Hunter
- Alternative Setup for Long-Duration Low-Duty-Cycle 600°C Ambient Testing of SiC Integrated CircuitsAlain IzadnegahdarStephanie L. BoothDavid J. SpryPhilip G. Neudeck
- 470 Celsius Packaging System for Silicon Carbide ElectronicsN. ChiolinoA. M. FrancisJ. HolmesM. BarlowC. Perkowski
- Simulating the Effect of Rigid Frameworks on the Mechanical Properties of Transient Liquid Phase Sintered (TLPS) AlloysGilad NavePatrick McCluskey
- A 300°C High Reliability HALT/HAST Screening/Sorting Procedure for Ceramic Capacitors – Part 2Harold L. Snyder
- Designs for reliability and failure mode prevention of electrical feedthroughs in integrated downhole logging toolsHua XiaNelson SettlesMichael GrimmGaery RutherfordDavid DeWire
- Low Loss LTCC Ag System for 5G ApplicationsEllen TormeyChao MaJohn MaloneyBradford SmithSid SridharanYi Yang
- Smart Ultrasonic Welding – A Versatile Interconnection Technology for Power Electronics PackagingMatthias HunstigSebastian HoltkämperLars HelmichMichael Brökelmann
- Silicon Carbide Junction Field Effect Transistor Compact Model for Extreme Environment Integrated Circuit DesignS. PerezA.M. FrancisJ. HolmesT. Vrotsos
Christou, A. 2021. “Novel Materials and Structures for Wide and Ultra-Wide Bandgap Semiconductor Switches.” IMAPSource Proceedings 2021 (HiTEC, CICMT, Power): 1–7. https://doi.org/10.4071/2380-4491.2021.HiTEC.000001.