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General
Vol. 2021, Issue HiTEC, CICMT, Power, 2021
April 01, 2021 EDT
Silicon Carbide Junction Field Effect Transistor Compact Model for Extreme Environment Integrated Circuit Design
S. Perez
,
A.M. Francis
,
J. Holmes
,
T. Vrotsos
,
compact model
high temperature electronics
integrated circuit
junction field effect transistor
JFET-R
NASA
silicon carbide
•
https://doi.org/10.4071/2380-4491.2021.HiTEC.000118
IMAPSource Conference Papers
Perez, S., A.M. Francis, J. Holmes, and T. Vrotsos. 2021. “Silicon Carbide Junction Field Effect Transistor Compact Model for Extreme Environment Integrated Circuit Design.”
IMAPSource Proceedings
2021 (HiTEC, CICMT, Power): 118–22.
https://doi.org/10.4071/2380-4491.2021.HiTEC.000118
.
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