Vol. 2021, Issue HiTEC, CICMT, Power, 2021April 01, 2021 EDT
Silicon Carbide Junction Field Effect Transistor Compact Model for Extreme Environment Integrated Circuit Design
Silicon Carbide Junction Field Effect Transistor Compact Model for Extreme Environment Integrated Circuit Design
Perez, S., A.M. Francis, J. Holmes, and T. Vrotsos. 2021. “Silicon Carbide Junction Field Effect Transistor Compact Model for Extreme Environment Integrated Circuit Design.” IMAPSource Proceedings 2021 (HiTEC, CICMT, Power): 118–22. https://doi.org/10.4071/2380-4491.2021.HiTEC.000118.
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