Vol. 2021, Issue HiTEC, CICMT, Power, 2021April 01, 2021 EDT
Upscaling of 500 °C Durable SiC JFET-R Integrated Circuits
Upscaling of 500 °C Durable SiC JFET-R Integrated Circuits
Philip G. Neudeck, David J. Spry, Michael J. Krasowski, Liangyu Chen, Lawrence C. Greer, Carl W. Chang, Dorothy Lukco, Glenn M. Beheim, Norman F. Prokop,
Neudeck, Philip G., David J. Spry, Michael J. Krasowski, Liangyu Chen, Lawrence C. Greer, Carl W. Chang, Dorothy Lukco, Glenn M. Beheim, and Norman F. Prokop. 2021. “Upscaling of 500 °C Durable SiC JFET-R Integrated Circuits.” IMAPSource Proceedings 2021 (HiTEC, CICMT, Power): 64–68. https://doi.org/10.4071/2380-4491.2021.HiTEC.000064.