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Vol. 2021, Issue HiTEC, CICMT, Power, 2021April 01, 2021 EDT

Enhancement Mode GaN-FETs in Extreme Temperature Conditions, Part II: Dynamic Parasitic Parameters

Martijn S. Duraij, Yudi Xiao, Gabriel Zsurzsan, Zhe Zang,
Device characterizationeGaN-FETHigh temperatureParasitic componentsSwitching losses
https://doi.org/10.4071/2380-4491.2021.HiTEC.000053
IMAPSource Conference Papers
Duraij, Martijn S., Yudi Xiao, Gabriel Zsurzsan, and Zhe Zang. 2021. “Enhancement Mode GaN-FETs in Extreme Temperature Conditions, Part II: Dynamic Parasitic Parameters.” IMAPSource Proceedings 2021 (HiTEC, CICMT, Power): 53–57. https:/​/​doi.org/​10.4071/​2380-4491.2021.HiTEC.000053.
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