Loading [Contrib]/a11y/accessibility-menu.js
IMAPSource Conference Papers
  • Menu
  • Articles
    • Ceramics Conference Papers
    • Device Packaging Conference Presentations
    • General
    • High Temperature Conference Papers
    • IMAPS Chapter Conferences
    • Symposium Proceedings
    • All
  • For Authors
  • Editorial Board
  • About
  • Issues
  • Journal Micro & Elect Pkg
  • search

    Sorry, something went wrong. Please try your search again.
    ×

    • Articles
    • Blog posts

RSS Feed

Enter the URL below into your favorite RSS reader.

https://imapsource.org/feed
×
General
Vol. 2021, Issue HiTEC, CICMT, Power, 2021April 01, 2021 EDT

Enhancement Mode GaN-FETs in Extreme Temperature Conditions, Part II: Dynamic Parasitic Parameters

Martijn S. Duraij, Yudi Xiao, Gabriel Zsurzsan, Zhe Zang,
Device characterization eGaN-FET High temperature Parasitic components Switching losses
• https://doi.org/10.4071/2380-4491.2021.HiTEC.000053
IMAPSource Conference Papers
Duraij, Martijn S., Yudi Xiao, Gabriel Zsurzsan, and Zhe Zang. 2021. “Enhancement Mode GaN-FETs in Extreme Temperature Conditions, Part II: Dynamic Parasitic Parameters.” IMAPSource Proceedings 2021 (HiTEC, CICMT, Power): 53–57. https://doi.org/10.4071/2380-4491.2021.HiTEC.000053.
Save article as...▾
  • PDF
  • XML
  • Citation (BibTeX)

View more stats

Powered by Scholastica, the modern academic journal management system