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High Temperature Conference Papers
Vol. 2016, Issue HiTEC, 2016May 01, 2016 EDT

Degradation Analysis of TO-247 Package SiC-MOSFETs Subjected to High Temperature Storage and Heavy Thermal Cycle Test

Sawa Araki, Tatsuhiro Suzuki, Mari Yamashita, Satoshi Tanimoto, Toshiaki Ono, Hisashi Yakumaru, Hiroki Sawada,
High temperaturePower deviceSiCMOSFETsPackageStorage testThermal cycle test
https://doi.org/10.4071/2016-HITEC-169
IMAPSource Conference Papers
Araki, Sawa, Tatsuhiro Suzuki, Mari Yamashita, Satoshi Tanimoto, Toshiaki Ono, Hisashi Yakumaru, and Hiroki Sawada. 2016. “Degradation Analysis of TO-247 Package SiC-MOSFETs Subjected to High Temperature Storage and Heavy Thermal Cycle Test.” IMAPSource Proceedings 2016 (HiTEC): 169–74. https:/​/​doi.org/​10.4071/​2016-HITEC-169.
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