Vol. 2016, Issue HiTEC, 2016May 01, 2016 EDT
Degradation Analysis of TO-247 Package SiC-MOSFETs Subjected to High Temperature Storage and Heavy Thermal Cycle Test
Degradation Analysis of TO-247 Package SiC-MOSFETs Subjected to High Temperature Storage and Heavy Thermal Cycle Test
Sawa Araki, Tatsuhiro Suzuki, Mari Yamashita, Satoshi Tanimoto, Toshiaki Ono, Hisashi Yakumaru, Hiroki Sawada,
Araki, Sawa, Tatsuhiro Suzuki, Mari Yamashita, Satoshi Tanimoto, Toshiaki Ono, Hisashi Yakumaru, and Hiroki Sawada. 2016. “Degradation Analysis of TO-247 Package SiC-MOSFETs Subjected to High Temperature Storage and Heavy Thermal Cycle Test.” IMAPSource Proceedings 2016 (HiTEC): 169–74. https://doi.org/10.4071/2016-HITEC-169.
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