Vol. 2016, Issue HiTEC, 2016May 01, 2016 EDT
Processing and Characterization of Thousand-Hour 500 °C Durable 4H-SiC JFET Integrated Circuits
Processing and Characterization of Thousand-Hour 500 °C Durable 4H-SiC JFET Integrated Circuits
David J. Spry, Philip G. Neudeck, Liang-Yu Chen, Dorothy Lukco, Carl W. Chang, Glenn M. Beheim, Michael J. Krasowski, Norman F. Prokop,
Spry, David J., Philip G. Neudeck, Liang-Yu Chen, Dorothy Lukco, Carl W. Chang, Glenn M. Beheim, Michael J. Krasowski, and Norman F. Prokop. 2016. “Processing and Characterization of Thousand-Hour 500 °C Durable 4H-SiC JFET Integrated Circuits.” IMAPSource Proceedings 2016 (HiTEC): 249–56. https://doi.org/10.4071/2016-HITEC-249.