Vol. 2016, Issue HiTEC, 2016May 01, 2016 EDT
A High Performance Power Module with >10kV capability to Characterize and Test In Situ SiC Devices at >200°C Ambient
A High Performance Power Module with >10kV capability to Characterize and Test In Situ SiC Devices at >200°C Ambient
Xin Zhao, Haotao Ke, Yifan Jiang, Adam Morgan, Yang Xu, Douglas C. Hopkins,
Zhao, Xin, Haotao Ke, Yifan Jiang, Adam Morgan, Yang Xu, and Douglas C. Hopkins. 2016. “A High Performance Power Module with >10kV Capability to Characterize and Test In Situ SiC Devices at >200°C Ambient.” IMAPSource Proceedings 2016 (HiTEC): 149–58. https://doi.org/10.4071/2016-HITEC-149.