ISSN 2380-4505
Vol. 2016, Issue HiTEC, 2016May 01, 2016 EDT
Silicon-Carbide Power MOSFET Performance in High Efficiency Boost Power Processing Unit for Extreme Environments
Silicon-Carbide Power MOSFET Performance in High Efficiency Boost Power Processing Unit for Extreme Environments
Stanley A. Ikpe, Jean-Marie Lauenstein, Gregory A. Carr, Don Hunter, Lawrence L. Ludwig, William Wood, Linda Y. Del Castillo, Mohammad M. Mojarradi, Fred Fitzpatrick, Yuan Chen,
Ikpe, Stanley A., Jean-Marie Lauenstein, Gregory A. Carr, Don Hunter, Lawrence L. Ludwig, William Wood, Linda Y. Del Castillo, Mohammad M. Mojarradi, Fred Fitzpatrick, and Yuan Chen. 2016. “Silicon-Carbide Power MOSFET Performance in High Efficiency Boost Power Processing Unit for Extreme Environments.” IMAPSource Proceedings 2016 (HiTEC): 184–89. https://doi.org/10.4071/2016-HITEC-184.