Vol. 2010, Issue HITEC, 2010January 01, 2010 EDT
Development of a 300°C capable SiC based operational amplifier
Development of a 300°C capable SiC based operational amplifier
Vinayak Tilak, Cheng-Po Chen, Peter Losee, Emad Andarawis, Zachary Stum,
Tilak, Vinayak, Cheng-Po Chen, Peter Losee, Emad Andarawis, and Zachary Stum. 2010. “Development of a 300°C Capable SiC Based Operational Amplifier.” IMAPSource Proceedings 2010 (HITEC): 305–9. https://doi.org/10.4071/HITEC-VTilak-WP24.