Vol. 2010, Issue HITEC, 2010January 01, 2010 EDT
Comparison of High Temperature Operation of Silicon Carbide MOSFETs and Bipolar Junction Transistors
Comparison of High Temperature Operation of Silicon Carbide MOSFETs and Bipolar Junction Transistors
Jim Richmond, Sei-Hyung Ryu, Qingchun (Jon) Zhang, Brett Hull, Mrinal Das, Albert Burk, Anant Agarwal, John Palmour,
Richmond, Jim, Sei-Hyung Ryu, Qingchun (Jon) Zhang, Brett Hull, Mrinal Das, Albert Burk, Anant Agarwal, and John Palmour. 2010. “Comparison of High Temperature Operation of Silicon Carbide MOSFETs and Bipolar Junction Transistors.” IMAPSource Proceedings 2010 (HITEC): 136–43. https://doi.org/10.4071/HITEC-JRichmond-TP21.
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