High Temperature (250 °C) Silicon Carbide Power Modules With Integrated Gate Drive Boards

B. Reese; B. McPherson; R. Shaw; J. Hornberger; R. Schupbach; A. Lostetter; B. Rowden; A. Mantooth; S. Ang; J. Balda; K. Okumura; T. Otsuka

doi:10.4071/HITEC-RSchupbach-WP23

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Reese, B., B. McPherson, R. Shaw, J. Hornberger, R. Schupbach, A. Lostetter, B. Rowden, et al. 2010. “High Temperature (250 °C) Silicon Carbide Power Modules With Integrated Gate Drive Boards.” IMAPSource Proceedings 2010 (HITEC): 297–304. https://doi.org/10.4071/HITEC-RSchupbach-WP23.

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