Reese, B., B. McPherson, R. Shaw, J. Hornberger, R. Schupbach, A. Lostetter, B. Rowden, et al. 2010. “High Temperature (250 °C) Silicon Carbide Power Modules With Integrated Gate Drive Boards.”
IMAPSource Proceedings 2010 (HITEC): 297–304.
https://doi.org/10.4071/HITEC-RSchupbach-WP23.