ISSN 2380-4505
Vol. 2010, Issue HITEC, 2010January 01, 2010 EDT
High Temperature (250 °C) Silicon Carbide Power Modules With Integrated Gate Drive Boards
High Temperature (250 °C) Silicon Carbide Power Modules With Integrated Gate Drive Boards
B. Reese, B. McPherson, R. Shaw, J. Hornberger, R. Schupbach, A. Lostetter, B. Rowden, A. Mantooth, S. Ang, J. Balda, K. Okumura, T. Otsuka,
Reese, B., B. McPherson, R. Shaw, J. Hornberger, R. Schupbach, A. Lostetter, B. Rowden, et al. 2010. “High Temperature (250 °C) Silicon Carbide Power Modules With Integrated Gate Drive Boards.” IMAPSource Proceedings 2010 (HITEC): 297–304. https://doi.org/10.4071/HITEC-RSchupbach-WP23.