Vol. 2010, Issue HITEC, 2010January 01, 2010 EDT
Performance and Reliability Characteristics of 1200 V, 100 A, 200°C Half-Bridge SiC MOSFET-JBS Diode Power Modules
Performance and Reliability Characteristics of 1200 V, 100 A, 200°C Half-Bridge SiC MOSFET-JBS Diode Power Modules
James D. Scofield, J. Neil Merrett, James Richmond, Anant Agarwal, Scott Leslie,
Scofield, James D., J. Neil Merrett, James Richmond, Anant Agarwal, and Scott Leslie. 2010. “Performance and Reliability Characteristics of 1200 V, 100 A, 200°C Half-Bridge SiC MOSFET-JBS Diode Power Modules.” IMAPSource Proceedings 2010 (HITEC): 289–96. https://doi.org/10.4071/HITEC-JScofield-WP22.