Vol. 2014, Issue HITEC, 2014January 01, 2014 EDT
Performance and Reliability Characterization of 1200 V Silicon Carbide Power MOSFETs and JFETs at High Temperatures
Performance and Reliability Characterization of 1200 V Silicon Carbide Power MOSFETs and JFETs at High Temperatures
Flicker, Jack, David Hughart, Robert Kaplar, Stanley Atcitty, and Matthew Marinella. 2014. “Performance and Reliability Characterization of 1200 V Silicon Carbide Power MOSFETs and JFETs at High Temperatures.” IMAPSource Proceedings 2014 (HITEC): 228–34. https://doi.org/10.4071/HITEC-WP16.
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