Vol. 2014, Issue HITEC, 2014January 01, 2014 EDT
Performance and Reliability Characterization of 1200 V Silicon Carbide Power MOSFETs and JFETs at High Temperatures
Performance and Reliability Characterization of 1200 V Silicon Carbide Power MOSFETs and JFETs at High Temperatures
Jack Flicker, David Hughart, Robert Kaplar, Stanley Atcitty, Matthew Marinella,
Flicker, Jack, David Hughart, Robert Kaplar, Stanley Atcitty, and Matthew Marinella. 2014. “Performance and Reliability Characterization of 1200 V Silicon Carbide Power MOSFETs and JFETs at High Temperatures.” IMAPSource Proceedings 2014 (HITEC): 228–34. https://doi.org/10.4071/HITEC-WP16.