A High Temperature (> 250 °C) SiC Schottky Diode Bridge Rectifier for Extreme Environment Applications

B. S. Passmore; J. Stabach; S. Storkov; D. Martin; G. Falling; R. Shaw; T. McNutt

doi:10.4071/HITEC-TA15

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Passmore, B. S., J. Stabach, S. Storkov, D. Martin, G. Falling, R. Shaw, and T. McNutt. 2014. “A High Temperature (> 250 °C) SiC Schottky Diode Bridge Rectifier for Extreme Environment Applications.” IMAPSource Proceedings 2014 (HITEC): 18–21. https://doi.org/10.4071/HITEC-TA15.

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