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High Temperature Conference Papers
Vol. 2014, Issue HITEC, 2014January 01, 2014 EDT

A High Temperature (> 250 °C) SiC Schottky Diode Bridge Rectifier for Extreme Environment Applications

B. S. Passmore, J. Stabach, S. Storkov, D. Martin, G. Falling, R. Shaw, T. McNutt,
Silicon Carbide (SiC) High Temperature Power Electronics Packaging Bridge Rectifier
• https://doi.org/10.4071/HITEC-TA15
IMAPSource Conference Papers
Passmore, B. S., J. Stabach, S. Storkov, D. Martin, G. Falling, R. Shaw, and T. McNutt. 2014. “A High Temperature (> 250 °C) SiC Schottky Diode Bridge Rectifier for Extreme Environment Applications.” IMAPSource Proceedings 2014 (HITEC): 18–21. https://doi.org/10.4071/HITEC-TA15.
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