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High Temperature Conference Papers
Vol. 2014, Issue HITEC, 2014January 01, 2014 EDT

500°C Silicon Carbide MOSFET-Based Integrated Circuits

Cheng-Po Chen, Reza Ghandi, Liang Yin, Xingguang Zhu, Liangchun Yu, Steve Arthur, Peter Sandvik,
500C Silicon Carbide SiC CMOS MOSFET integrated circuit inverter amplifier
• https://doi.org/10.4071/HITEC-TP14
IMAPSource Conference Papers
Chen, Cheng-Po, Reza Ghandi, Liang Yin, Xingguang Zhu, Liangchun Yu, Steve Arthur, and Peter Sandvik. 2014. “500°C Silicon Carbide MOSFET-Based Integrated Circuits.” IMAPSource Proceedings 2014 (HITEC): 72–75. https://doi.org/10.4071/HITEC-TP14.
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