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High Temperature Conference Papers
Vol. 2014, Issue HITEC, 2014
January 01, 2014 EDT
500°C Silicon Carbide MOSFET-Based Integrated Circuits
Cheng-Po Chen
,
Reza Ghandi
,
Liang Yin
,
Xingguang Zhu
,
Liangchun Yu
,
Steve Arthur
,
Peter Sandvik
,
500C
Silicon Carbide
SiC
CMOS
MOSFET
integrated circuit
inverter
amplifier
•
https://doi.org/10.4071/HITEC-TP14
IMAPSource Conference Papers
Chen, Cheng-Po, Reza Ghandi, Liang Yin, Xingguang Zhu, Liangchun Yu, Steve Arthur, and Peter Sandvik. 2014. “500°C Silicon Carbide MOSFET-Based Integrated Circuits.”
IMAPSource Proceedings
2014 (HITEC): 72–75.
https://doi.org/10.4071/HITEC-TP14
.
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