Vol. 2014, Issue HITEC, 2014January 01, 2014 EDT
500°C Silicon Carbide MOSFET-Based Integrated Circuits
500°C Silicon Carbide MOSFET-Based Integrated Circuits
Chen, Cheng-Po, Reza Ghandi, Liang Yin, Xingguang Zhu, Liangchun Yu, Steve Arthur, and Peter Sandvik. 2014. “500°C Silicon Carbide MOSFET-Based Integrated Circuits.” IMAPSource Proceedings 2014 (HITEC): 72–75. https://doi.org/10.4071/HITEC-TP14.
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