Vol. 2014, Issue HITEC, 2014January 01, 2014 EDT
High Temperature capable SiC Schottky diodes, based on buried grid design.
High Temperature capable SiC Schottky diodes, based on buried grid design.
Hjort, Tomas, Adolf Schöner, Andy Zhang, Mietek Bakowski, Jang-Kwon Lim, and Wlodek Kaplan. 2014. “High Temperature Capable SiC Schottky Diodes, Based on Buried Grid Design.” IMAPSource Proceedings 2014 (HITEC): 58–60. https://doi.org/10.4071/HITEC-TP11.
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