Vol. 2013, Issue HITEN, 2013January 01, 2013 EDT
A 4H-SiC Bipolar Technology for High-temperature Integrated Circuits
A 4H-SiC Bipolar Technology for High-temperature Integrated Circuits
L. Lanni, B. G. Malm, C.-M. Zetterling, M. Östling,
Lanni, L., B. G. Malm, C.-M. Zetterling, and M. Östling. 2013. “A 4H-SiC Bipolar Technology for High-Temperature Integrated Circuits.” IMAPSource Proceedings 2013 (HITEN): 282–89. https://doi.org/10.4071/HITEN-WP13.