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High Temperature Conference Papers
Vol. 2013, Issue HITEN, 2013
January 01, 2013 EDT
A 4H-SiC Bipolar Technology for High-temperature Integrated Circuits
L. Lanni
,
B. G. Malm
,
C.-M. Zetterling
,
M. Östling
,
Silicon Carbide (SiC)
Emitter coupled logic (ECL)
high temperature integrated circuits (ICs)
OR-NOR gate
bipolar junction transistor (BJT)
Aluminium metallization
Platinum metallization
•
https://doi.org/10.4071/HITEN-WP13
IMAPSource Conference Papers
Lanni, L., B. G. Malm, C.-M. Zetterling, and M. Östling. 2013. “A 4H-SiC Bipolar Technology for High-Temperature Integrated Circuits.”
IMAPSource Proceedings
2013 (HITEN): 282–89.
https://doi.org/10.4071/HITEN-WP13
.
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