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High Temperature Conference Papers
Vol. 2013, Issue HITEN, 2013January 01, 2013 EDT

1200 V SiC Schottky Rectifiers optimized for ≥ 250 °C operation with low junction capacitance

Ranbir Singh, Siddarth Sundaresan,
SiCSchottky1200v250crectifierhigh temperatureSHT
https://doi.org/10.4071/HITEN-WP15
IMAPSource Conference Papers
Singh, Ranbir, and Siddarth Sundaresan. 2013. “1200 V SiC Schottky Rectifiers Optimized for ≥ 250 °C Operation with Low Junction Capacitance.” IMAPSource Proceedings 2013 (HITEN): 298–301. https:/​/​doi.org/​10.4071/​HITEN-WP15.
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