Vol. 2013, Issue HITEN, 2013January 01, 2013 EDT
1200 V SiC Schottky Rectifiers optimized for ≥ 250 °C operation with low junction capacitance
1200 V SiC Schottky Rectifiers optimized for ≥ 250 °C operation with low junction capacitance
Singh, Ranbir, and Siddarth Sundaresan. 2013. “1200 V SiC Schottky Rectifiers Optimized for ≥ 250 °C Operation with Low Junction Capacitance.” IMAPSource Proceedings 2013 (HITEN): 298–301. https://doi.org/10.4071/HITEN-WP15.
Powered by Scholastica, the modern academic journal management system