Vol. 2013, Issue HITEN, 2013January 01, 2013 EDT
High Temperature Reliability Investigations up to 350 °C of Gate Oxide Capacitors realized in a Silicon-on-Insulator CMOS-Technology
High Temperature Reliability Investigations up to 350 °C of Gate Oxide Capacitors realized in a Silicon-on-Insulator CMOS-Technology
Grella, K., S. Dreiner, H. Vogt, and U. Paschen. 2013. “High Temperature Reliability Investigations up to 350 °C of Gate Oxide Capacitors Realized in a Silicon-on-Insulator CMOS-Technology.” IMAPSource Proceedings 2013 (HITEN): 116–21. https://doi.org/10.4071/HITEN-TA13.
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