Vol. 2013, Issue HITEN, 2013January 01, 2013 EDT
High-Temperature Characterization and Comparison of 1.2 kV SiC Power Semiconductor Devices
High-Temperature Characterization and Comparison of 1.2 kV SiC Power Semiconductor Devices
Christina DiMarino, Zheng Chen, Dushan Boroyevich, Rolando Burgos, Paolo Mattavelli,
DiMarino, Christina, Zheng Chen, Dushan Boroyevich, Rolando Burgos, and Paolo Mattavelli. 2013. “High-Temperature Characterization and Comparison of 1.2 kV SiC Power Semiconductor Devices.” IMAPSource Proceedings 2013 (HITEN): 82–87. https://doi.org/10.4071/HITEN-MP15.