Vol. 2013, Issue HITEN, 2013January 01, 2013 EDT
Performance and Reliability Characterization of 1200 V Silicon Carbide Power MOSFETs at High Temperatures
Performance and Reliability Characterization of 1200 V Silicon Carbide Power MOSFETs at High Temperatures
R. J. Kaplar, D. R. Hughart, S. Atcitty, J. D. Flicker, S. DasGupta, M. J. Marinella,
Kaplar, R. J., D. R. Hughart, S. Atcitty, J. D. Flicker, S. DasGupta, and M. J. Marinella. 2013. “Performance and Reliability Characterization of 1200 V Silicon Carbide Power MOSFETs at High Temperatures.” IMAPSource Proceedings 2013 (HITEN): 275–80. https://doi.org/10.4071/HITEN-WP11.