Vol. 2018, Issue HiTEC, 2018May 01, 2018 EDT
Yearlong 500 °C Operational Demonstration of Up-scaled 4H-SiC JFET Integrated Circuits
Yearlong 500 °C Operational Demonstration of Up-scaled 4H-SiC JFET Integrated Circuits
Philip G. Neudeck, David J. Spry, Michael J. Krasowski, Norman F. Prokop, Glenn M. Beheim, Liang-Yu Chen, Carl W. Chang,
Neudeck, Philip G., David J. Spry, Michael J. Krasowski, Norman F. Prokop, Glenn M. Beheim, Liang-Yu Chen, and Carl W. Chang. 2018. “Yearlong 500 °C Operational Demonstration of Up-Scaled 4H-SiC JFET Integrated Circuits.” IMAPSource Proceedings 2018 (HiTEC): 71–78. https://doi.org/10.4071/2380-4491-2018-HiTEN-000071.