Vol. 2012, Issue CICMT, 2012September 01, 2012 EDT
Bonding of 2 mm thick silicon wafers using LTCC as an intermediate layer
Bonding of 2 mm thick silicon wafers using LTCC as an intermediate layer
S. Günschmann, M. Fischer, T. Bley, I. Käpplinger, W. Brode, H. Mannebach, J. Müller,
Günschmann, S., M. Fischer, T. Bley, I. Käpplinger, W. Brode, H. Mannebach, and J. Müller. 2012. “Bonding of 2 Mm Thick Silicon Wafers Using LTCC as an Intermediate Layer.” IMAPSource Proceedings 2012 (CICMT): 436–40. https://doi.org/10.4071/CICMT-2012-WA416.