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High Temperature Conference Papers
Vol. 2012, Issue HITEC, 2012January 01, 2012 EDT

High-temperature Characterization of a 1200 V Power Module with 36 mm2 of SiC VJFET Area

Kevin M. Speer, Robin Schrader, David C. Sheridan, Andrew Lemmon, Jim Gafford, Chris Parker, Michael S. Mazzola, Jeffrey B. Casady,
silicon carbideJFETpower modulehigh temperature
https://doi.org/10.4071/HITEC-2012-WA12
IMAPSource Conference Papers
Speer, Kevin M., Robin Schrader, David C. Sheridan, Andrew Lemmon, Jim Gafford, Chris Parker, Michael S. Mazzola, and Jeffrey B. Casady. 2012. “High-Temperature Characterization of a 1200 V Power Module with 36 Mm2 of SiC VJFET Area.” IMAPSource Proceedings 2012 (HITEC): 144–48. https:/​/​doi.org/​10.4071/​HITEC-2012-WA12.
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