Vol. 2012, Issue HITEC, 2012January 01, 2012 EDT
High-temperature Characterization of a 1200 V Power Module with 36 mm2 of SiC VJFET Area
High-temperature Characterization of a 1200 V Power Module with 36 mm2 of SiC VJFET Area
Kevin M. Speer, Robin Schrader, David C. Sheridan, Andrew Lemmon, Jim Gafford, Chris Parker, Michael S. Mazzola, Jeffrey B. Casady,
Speer, Kevin M., Robin Schrader, David C. Sheridan, Andrew Lemmon, Jim Gafford, Chris Parker, Michael S. Mazzola, and Jeffrey B. Casady. 2012. “High-Temperature Characterization of a 1200 V Power Module with 36 Mm2 of SiC VJFET Area.” IMAPSource Proceedings 2012 (HITEC): 144–48. https://doi.org/10.4071/HITEC-2012-WA12.
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