Vol. 2012, Issue HITEC, 2012January 01, 2012 EDT
High Temperature Characterization up to 450 °C of MOSFETs and basic circuits realized in a Silicon-on-Insulator (SOI) CMOS-Technology
High Temperature Characterization up to 450 °C of MOSFETs and basic circuits realized in a Silicon-on-Insulator (SOI) CMOS-Technology
K. Grella, S. Dreiner, A. Schmidt, W. Heiermann, H. Kappert, H. Vogt, U. Paschen,
Grella, K., S. Dreiner, A. Schmidt, W. Heiermann, H. Kappert, H. Vogt, and U. Paschen. 2012. “High Temperature Characterization up to 450 °C of MOSFETs and Basic Circuits Realized in a Silicon-on-Insulator (SOI) CMOS-Technology.” IMAPSource Proceedings 2012 (HITEC): 227–32. https://doi.org/10.4071/HITEC-2012-WP15.