Vol. 2012, Issue HITEC, 2012January 01, 2012 EDT
Characterization of a Large Area Silicon Carbide PiN Diode at Temperatures up to 900°C
Characterization of a Large Area Silicon Carbide PiN Diode at Temperatures up to 900°C
Jim Richmond, Lin Cheng, Anant Agarwal, John Palmour,
Richmond, Jim, Lin Cheng, Anant Agarwal, and John Palmour. 2012. “Characterization of a Large Area Silicon Carbide PiN Diode at Temperatures up to 900°C.” IMAPSource Proceedings 2012 (HITEC): 384–87. https://doi.org/10.4071/HITEC-THP13.