Vol. 2012, Issue HITEC, 2012January 01, 2012 EDT
SILICON CARBIDE “SUPER” JUNCTION TRANSISTORS OPERATING AT 500 °C
SILICON CARBIDE “SUPER” JUNCTION TRANSISTORS OPERATING AT 500 °C
Sundaresan, Siddarth, Ranbir Singh, and R. Wayne Johnson. 2012. “SILICON CARBIDE ‘SUPER’ JUNCTION TRANSISTORS OPERATING AT 500 °C.” IMAPSource Proceedings 2012 (HITEC): 162–66. https://doi.org/10.4071/HITEC-2012-WA15.
Powered by Scholastica, the modern academic journal management system