Vol. 2011, Issue HITEN, 2011January 01, 2011 EDT
Electrical Characterization of Lateral 4H-SiC MOSFETs in the Temperature Range of 25 to 600 °C for Harsh Environment Applications
Electrical Characterization of Lateral 4H-SiC MOSFETs in the Temperature Range of 25 to 600 °C for Harsh Environment Applications
W. Daves, A. Krauss, V. Häublein, A. J. Bauer, L. Frey,
Daves, W., A. Krauss, V. Häublein, A. J. Bauer, and L. Frey. 2011. “Electrical Characterization of Lateral 4H-SiC MOSFETs in the Temperature Range of 25 to 600 °C for Harsh Environment Applications.” IMAPSource Proceedings 2011 (HITEN): 108–14. https://doi.org/10.4071/HITEN-Paper4-WDaves.