Vol. 2011, Issue HITEN, 2011January 01, 2011 EDT
Electrical Characterization of Lateral 4H-SiC MOSFETs in the Temperature Range of 25 to 600 °C for Harsh Environment Applications
Electrical Characterization of Lateral 4H-SiC MOSFETs in the Temperature Range of 25 to 600 °C for Harsh Environment Applications
Daves, W., A. Krauss, V. Häublein, A. J. Bauer, and L. Frey. 2011. “Electrical Characterization of Lateral 4H-SiC MOSFETs in the Temperature Range of 25 to 600 °C for Harsh Environment Applications.” IMAPSource Proceedings 2011 (HITEN): 108–14. https://doi.org/10.4071/HITEN-Paper4-WDaves.
Powered by Scholastica, the modern academic journal management system