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High Temperature Conference Papers
Vol. 2011, Issue HITEN, 2011January 01, 2011 EDT

Electrical Characterization of Lateral 4H-SiC MOSFETs in the Temperature Range of 25 to 600 °C for Harsh Environment Applications

W. Daves, A. Krauss, V. Häublein, A. J. Bauer, L. Frey,
4H-SiCMOSFETtransducerhigh-temperatureharsh environment
https://doi.org/10.4071/HITEN-Paper4-WDaves
IMAPSource Conference Papers
Daves, W., A. Krauss, V. Häublein, A. J. Bauer, and L. Frey. 2011. “Electrical Characterization of Lateral 4H-SiC MOSFETs in the Temperature Range of 25 to 600 °C for Harsh Environment Applications.” IMAPSource Proceedings 2011 (HITEN): 108–14. https:/​/​doi.org/​10.4071/​HITEN-Paper4-WDaves.
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