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High Temperature Conference Papers
Vol. 2011, Issue HITEN, 2011January 01, 2011 EDT

1200V 20A SiC BJTs operating at 250°C

Anders Lindgren, Martin Domeij, Tomas Hjort,
SiCBJTswitchinghigh temperature transistorSPICE
https://doi.org/10.4071/HITEN-Paper1-ALindgren
IMAPSource Conference Papers
Lindgren, Anders, Martin Domeij, and Tomas Hjort. 2011. “1200V 20A SiC BJTs Operating at 250°C.” IMAPSource Proceedings 2011 (HITEN): 91–97. https:/​/​doi.org/​10.4071/​HITEN-Paper1-ALindgren.
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