Vol. 2017, Issue HiTEN, 2017July 01, 2017 EDT
Thermal reliability of SiC device with Cu sintering die-attach processed at 250°C in N2 gas
Thermal reliability of SiC device with Cu sintering die-attach processed at 250°C in N2 gas
Shijo Nagao, Hiroki Yoshikawa, Hirofumi Fujita, Akio Shimoyama, Shinya Seki, Hao Zhang, Katsuaki Suganuma,
Nagao, Shijo, Hiroki Yoshikawa, Hirofumi Fujita, Akio Shimoyama, Shinya Seki, Hao Zhang, and Katsuaki Suganuma. 2017. “Thermal Reliability of SiC Device with Cu Sintering Die-Attach Processed at 250°C in N2 Gas.” IMAPSource Proceedings 2017 (HiTEN): 193–96. https://doi.org/10.4071/2380-4491.2017.HiTEN.193.