Vol. 2013, Issue 1, 2013January 01, 2013 EDT
Package design and development of a low cost high temperature (250°C), high current (50+A), low inductance discrete power package for advanced Silicon Carbide (SiC) and Gallium Nitride (GaN) devices
Package design and development of a low cost high temperature (250°C), high current (50+A), low inductance discrete power package for advanced Silicon Carbide (SiC) and Gallium Nitride (GaN) devices
McPherson, B., B. Passmore, P. Killeen, D. Martin, A. Barkley, and T. McNutt. 2013. “Package Design and Development of a Low Cost High Temperature (250°C), High Current (50+A), Low Inductance Discrete Power Package for Advanced Silicon Carbide (SiC) and Gallium Nitride (GaN) Devices.” IMAPSource Proceedings 2013 (1): 592–97. https://doi.org/10.4071/isom-2013-WA63.
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