ISSN 2380-4505
Vol. 2025, Issue HiTEC, CICMT, Power, 2025February 04, 2026 EDT
Memory Phenomenon of GaN pn Junction by Engineering Its Interface, Which is Stable at High Temperatures up to 500oC
Memory Phenomenon of GaN pn Junction by Engineering Its Interface, Which is Stable at High Temperatures up to 500oC
Fu, Kai. 2026. “Memory Phenomenon of GaN Pn Junction by Engineering Its Interface, Which Is Stable at High Temperatures up to 500oC.” IMAPSource Proceedings 2025 (HiTEC, CICMT, Power): 114–54. https://doi.org/10.4071/001c.156246.